SEMICONDUCTOR
KTA1045D/L
TECHNICAL DATA
EPITAXIAL PLANAR PNP TRANSISTOR
LOW FREQUENCY POWER AMP,
MEDIUM SPEED SWITCHING APPLICATIONS
A
I
C
J
D
FEATURES
High breakdown voltage VCEO 120V, high current 1A.
O
K
E
Q
Complementary to KTC2025D/L
M
B
Low saturation voltage and good linearity of hFE.
H
P
F
1
MAXIMUM RATING (Ta=25
)
2
3
MILLIMETERS
_
6.60 + 0.2
_
6.10 + 0.2
_ 0.2
5.0 +
_
1.10 + 0.2
_
2.70 + 0.2
_
2.30 + 0.1
1.00 MAX
_
2.30 + 0.2
_
0.5 + 0.1
_
2.00 + 0.20
_
0.50 + 0.10
_
0.91+ 0.10
_
0.90 + 0.1
_
1.00 + 0.10
0.95 MAX
1. BASE
SYMBOL
RATING
Collector-Base Voltage
VCBO
-120
V
Collector-Emitter Voltage
VCEO
-120
V
Emitter-Base Voltage
VEBO
-5
V
IC
-1
ICP
-2
2. COLLECTOR
UNIT
Dissipation
Tc=25
1.0
PC
P
H
G
150
Tstg
Storage Temperature Range
D
W
8
Tj
Junction Temperature
J
B
Ta=25
I
A
C
A
K
Collector Power
DPAK
E
Collector Current
3. EMITTER
Q
CHARACTERISTIC
L
F
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
-55 150
F
1
F
2
L
3
DIM
A
B
C
D
E
F
G
H
I
J
K
L
P
Q
MILLIMETERS
_
6.60 + 0.2
_
6.10 + 0.2
_
5.0 + 0.2
_
1.10 + 0.2
_
9.50 + 0.6
_
2.30 + 0.1
_
0.76 + 0.1
1.0 MAX
_
2.30 + 0.2
_
0.5 + 0.1
_
2.0 + 0.2
_
0.50 + 0.1
_
1.0 + 0.1
0.90 MAX
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
IPAK
)
MIN.
TYP.
MAX.
UNIT
Collector Cut of Current
SYMBOL
ICBO
VCB=-50V, IE=0
TEST CONDITION
-
-
-1
A
Emitter Cut of Current
IEBO
VEB=-4V, IC=0
-
-
-1
Collector-Base Breakdown Voltage
V(BR)CBO
-120
-
-
A
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=-10 A, IE=0
IC=-1mA, IB=0
-120
Emitter-Base Breakdown Voltage
V(BR)EBO
V
-
-
V
100
-
320
hFE(2)
VCE=-5V, IC=-500mA
20
-
-
fT
Gain Bandwidth Product
-
-5
hFE(1) Note
DC Current Gain
-
IE=-10 A, IC=0
VCE=-5V, IC=-50mA
VCE=-10V, IC=-50mA
-
110
-
MHz
VCB=-10V, IE=0, f=1MHz
-
30
-
pF
Collector-Emitter Saturation Voltage
VCE(sat)
Cob
IC=-500mA, IB=-50mA
-
-0.15
-0.4
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=-500mA, IB=-50mA
-
-0.85
-1.2
V
-
80
-
-
100
-
-
600
-
Output Capacitance
Turn-on Time
Switching Time
Turn-off Time
ton
toff
1Ω
20µsec
I B2
I B1
24Ω
100Ω
1uF
Storage Time
(Note) : hFE(1) Classification
2003. 3. 27
tstg
nS
1uF
2V
-12V
VCE =-12V
I C =10I B1 =-10I B2 =500mA
Y:100 200, GR:160 320
Revision No : 5
1/2
