MSE1PB, MSE1PD, MSE1PG, MSE1PJ
www.vishay.com
Vishay General Semiconductor
Surface Mount ESD Capability Rectifier
FEATURES
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®
eSMP Series
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Top View
Bottom View
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MicroSMP
Very low profile - typical height of 0.65 mm
Available
Ideal for automated placement
Oxide planar chip junction
Low forward voltage drop, low leakage
current
ESD capability
Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
AEC-Q101 qualified
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose, polarity protection, and rail-to-rail
protection in both consumer and automotive applications.
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
100 V, 200 V, 400 V, 600 V
IFSM
20 A
VF at IF = 1.0 A
0.925 V
IR
175 °C
Package
MicroSMP
Diode variations
Case: MicroSMP
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
1 μA
TJ max.
MECHANICAL DATA
Single die
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
MSE1PB
MSE1PD
MSE1PG
MSE1PJ
SB
Device marking code
SD
SG
SJ
100
200
400
600
UNIT
Max. repetitive peak reverse voltage
VRRM
Max. average forward rectified current (fig. 1)
IF(AV)
1.0
A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
20
A
TJ, TSTG
-55 to +175
°C
Operating junction and storage temperature range
V
ELECTRICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 0.5 A
Max. instantaneous forward voltage
IF = 1.0 A
IF = 0.5 A
IF = 1.0 A
Max. reverse current
Rated VR
SYMBOL
VF (1)
TA = 125 °C
TA = 25 °C
TA = 125 °C
IR (2)
MAX.
-
1.016
1.1
0.834
-
0.925
TA = 25 °C
TYP.
0.940
0.98
-
1.0
3.7
50
UNIT
V
μA
Typical reverse recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
780
-
ns
Typical junction capacitance
4.0 V, 1 MHz
CJ
5
-
pF
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
Revision: 19-Feb-16
Document Number: 89067
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
