BSL302SN
OptiMOS®2 Small-Signal-Transistor
Product Summary
Features
30
V
V GS=10 V
25
mΩ
V GS=4.5 V
38
V DS
• N-channel
R DS(on),max
• Enhancement mode
• Logic level (4.5V rated)
7.1
ID
A
• Avalanche rated
• dv /dt rated
PG-TSOP-6
• Pb-free lead plating; RoHS compliant
6
• Qualified according to AEC Q101
5
4
1
2
Type
Package
Tape and Reel Information
BSL302SN
PG-TSOP-6 L6327 = 3000 pcs. / reel
3
Marking
Lead Free
Packing
sPE
Yes
Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T A=25 °C
7.1
T A=70 °C
Unit
5.7
A
Pulsed drain current
I D,pulse
T A=25 °C
28
Avalanche energy, single pulse
E AS
I D=7.1 A, R GS=25 Ω
30
mJ
Reverse diode dv /dt
dv /dt
I D=7.5 A, V DS=16 V,
di /dt =200 A/µs,
T j,max=150 °C
6
kV/µs
Gate source voltage
V GS
Power dissipation1)
P tot
Operating and storage temperature
T j, T stg
ESD Class
±20
JESD22-A114-HBM
Soldering Temperature
W
°C
0 (0V to 250V)
260 °C
IEC climatic category; DIN IEC 68-1
1.07
2
-55 ... 150
T A=25 °C
V
55/150/56
page 1
2011-06-03
BSL302SN
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
564
750
-
202
269
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
28
43
Turn-on delay time
t d(on)
-
6.4
-
Rise time
tr
-
2.8
-
Turn-off delay time
t d(off)
-
13.7
-
Fall time
tf
-
1.9
-
Gate to source charge
Q gs
-
1.78
2.37
Gate to drain charge
Q gd
-
1.2
1.8
Gate charge total
Qg
-
4.4
6.6
Gate plateau voltage
V plateau
-
3.2
-
V
-
-
2.5
A
-
-
28
-
0.8
1.2
-
14.2
-
5.1
V GS=0 V, V DS=15 V,
f =1 MHz
V DD=15 V, V GS=10 V,
I D=7.1 A, R G=1.6 Ω
pF
ns
Gate Charge Characteristics
V DD=15 V, I D=7.1 A,
V GS=0 to 5 V
nC
Reverse Diode
Diode continous forward current
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
1.07
IS
Q rr
T A=25 °C
V GS=0 V, I F=7.1 A,
T j=25 °C
V R=15 V, I F=7.1 A,
di F/dt =100 A/µs
page 3
V
ns
-
nC
2011-06-03
