March 1998
FDC633N
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
This N-Channel enhancement mode power field effect
transistors is produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
tailored to minimize on-state resistance. These devices are
particularly suited for low voltage applications in notebook
computers, portable phones, PCMICA cards, and other
battery powered circuits where fast switching,low in-line
power loss and resistance to transients are needed in a very
small outline surface mount package.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
5.2 A, 30 V. RDS(ON) = 0.042 Ω @ VGS = 4.5 V
RDS(ON) = 0.054 Ω @ VGS = 2.5 V.
SuperSOTTM-6 package design using copper lead frame for
superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current
capability.
SOIC-16
SOT-223
SO-8
S
1
D
.63
6
2
5
3
D
4
3
G
SuperSOT
TM
pin 1
-6
D
D
Absolute Maximum Ratings T A = 25°C unless otherwise noted
Symbol Parameter
FDC633N
VDSS
VGSS
Gate-Source Voltage - Continuous
ID
Drain Current - Continuous
PD
Maximum Power Dissipation
30
Drain-Source Voltage
Units
V
±8
V
(Note 1a)
5.2
A
(Note 1a)
1.6
(Note 1b)
0.8
- Pulsed
TJ,TSTG
16
Operating and Storage Temperature Range
W
-55 to 150
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
30
°C/W
© 1998 Fairchild Semiconductor Corporation
FDC633N Rev.C
Typical Electrical Characteristics
2.5
R DS(ON), NORMALIZED
I D , DRAIN-SOURCE CURRENT (A)
VGS = 4.5V
3.0
15
2.0
10
5
1.5
0
DRAIN-SOURCE ON-RESISTANCE
2
20
1.8
1.4
0.5
1
1.5
2
2.5
2.5
3.0
1.2
3.5
4.5
1
0.8
0
V GS = 2.0V
1.6
3
0
5
10
I D , DRAIN CURRENT (A)
VDS , DRAIN-SOURCE VOLTAGE (V)
0.15
R DS(ON) , ON-RESISTANCE (OHM)
I D = 5.2A
V GS = 4.5V
1.4
1.2
1
0.8
I D = 2.5A
0.12
0.09
TA = 125°C
0.06
0.03
T = 25°C
A
0
0.6
-50
1
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
GS
Figure 3. On-Resistance Variation
with Temperature.
15
TJ = -55°C
VDS = 5V
25°C
12
125°C
9
6
3
0.5
1
V
GS
1.5
2
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
5
2.5
VGS = 0V
T = 125°C
J
1
25°C
0.1
-55°C
0.01
0.001
0.0001
0
3
, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
15
0
2
V
150
I S , REVERSE DRAIN CURRENT (A)
R DS(ON) , NORMALIZED
1.6
DRAIN-SOURCE ON-RESISTANCE
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 1. On-Region Characteristics.
I D, DRAIN CURRENT (A)
15
0
0.2
0.4
0.6
0.8
1
1.2
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDC633N Rev.C
