FJN3306R
FJN3306R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R1=10KΩ, R2=47KΩ)
• Complement to FJN4306R
TO-92
1
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
Value
50
VCEO
VEBO
Collector-Emitter Voltage
50
V
Emitter-Base Voltage
10
IC
Collector Current
100
mA
PC
Collector Power Dissipation
300
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
Equivalent Circuit
Units
V
V
°C
C
R1
B
R2
E
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC=10µA, IE=0
BVCEO
Collector-Emitter Breakdown Voltage
IC=100µA, IB=0
ICBO
Collector Cut-off Current
VCB=40V, IE=0
hFE
DC Current Gain
VCE=5V, IC=5mA
VCE(sat)
Collector-Emitter Saturation Voltage
Output Capacitance
Typ.
Units
V
0.1
VCE=10mA, IE=0
f=1.0MHz
µA
V
68
0.3
V
3.7
Current Gain Bandwidth Product
VCB=10V, IC=5mA
Input Off Voltage
VCE=5V, IC=100µA
VI(on)
Input On Voltage
R1
Input Resistor
7
Resistor Ratio
0.19
MHz
VCE=0.3V, IC=1mA
R1/R2
pF
250
fT
VI(off)
©2002 Fairchild Semiconductor Corporation
Max.
50
IC=10mA, IB=0.5mA
Cob
Min.
50
0.3
V
1.4
V
10
13
KΩ
0.21
0.24
Rev. A, July 2002
