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部品型式

MT47H128M16HG-37E:A

製品説明
仕様・特性

2Gb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H512M4 – 64 Meg x 4 x 8 banks MT47H256M8 – 32 Meg x 8 x 8 banks MT47H128M16 – 16 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • Configuration – 512 Meg x 4 (64 Meg x 4 x 8 banks) – 256 Meg x 8 (32 Meg x 8 x 8 banks) – 128 Meg x 16 (16 Meg x 16 x 8 banks) • FBGA package (Pb-free) – x16 – 84-ball FBGA (11.5mm x 14mm) Rev. A • FBGA package (Pb-free) – x4, x8 – 60-ball FBGA (11.5mm x 14mm) Rev. A • FBGA package (Pb-free) – x16 – 84-ball FBGA (9mm x 12.5mm) Rev. C • FBGA package (Pb-free) – x4, x8 – 60-ball FBGA (9mm x 11.5mm) Rev. C • FBGA package (Lead solder) – x16 – 84-ball FBGA (9mm x 12.5mm) Rev. C • Timing – cycle time – 1.875ns @ CL = 7 (DDR2-1066) – 2.5ns @ CL = 5 (DDR2-800) – 2.5ns @ CL = 6 (DDR2-800) – 3.0ns @ CL = 4 (DDR2-667) – 3.0ns @ CL = 5 (DDR2-667) – 3.75ns @ CL = 4 (DDR2-533) – 5.0ns @ CL = 3 (DDR2-400) • Self refresh – Standard • Operating temperature – Commercial (0°C T C +85°C) – Industrial (–40°C T C +95°C; –40°C T A +85°C) • Revision VDD = 1.8V ±0.1V, V DDQ = 1.8V ±0.1V JEDEC-standard 1.8V I/O (SSTL_18-compatible) Differential data strobe (DQS, DQS#) option 4n-bit prefetch architecture Duplicate output strobe (RDQS) option for x8 DLL to align DQ and DQS transitions with CK 8 internal banks for concurrent operation Programmable CAS latency (CL) Posted CAS additive latency (AL) WRITE latency = READ latency - 1 tCK Programmable burst lengths: 4 or 8 Adjustable data-output drive strength 64ms, 8192-cycle refresh On-die termination (ODT) Industrial temperature (IT) option RoHS-compliant Supports JEDEC clock jitter specification Note: PDF: 09005aef824f87b6 2Gb_DDR2.pdf – Rev. G 7/11 EN 1 Marking 512M4 256M8 128M16 HG HG RT EB PK -187E -25E -25 -3E -3 -37E -5E None None IT :A/:C 1. Not all options listed can be combined to define an offered product. Use the Part Catalog Search on www.micron.com for product offerings and availability. Micron Technology, Inc. reserves the right to change products or specifications without notice. ‹ 2006 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 2Gb: x4, x8, x16 DDR2 SDRAM Features FBGA Part Number System Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Micron’s Web site: http://www.micron.com. PDF: 09005aef824f87b6 2Gb_DDR2.pdf – Rev. G 7/11 EN 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. ‹ 2006 Micron Technology, Inc. All rights reserved.

ブランド

MICRON

会社名

Micron Technology

本社国名

U.S.A

事業概要

メモリ・ストレージ用の各種半導体メモリ(DRAMやフラッシュメモリとそれらの搭載製品群)を製造・販売している。主力製品は、DRAM, FLASH MEMORY

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