2SK365
TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
2SK365
For Audio Amplifier, Analog-Switch, Constant Current
and Impedance Converter Applications
•
Unit: mm
High breakdown voltage: VGDS = −50 V
•
High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V)
•
Low RDS (ON): RDS (ON) = 80 Ω (typ.) (IDSS = 5 mA)
•
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
VGDS
−50
V
Gate current
IG
10
mA
Drain power dissipation
PD
200
mW
Junction temperature
Tj
125
°C
Tstg
−55~125
°C
Gate-drain voltage
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of
JEDEC
―
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
―
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-4E1C
absolute maximum ratings.
Weight: 0.13 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Symbol
Test Condition
Min
Typ.
Max
Unit
IGSS
VGS = −30 V, VDS = 0
⎯
⎯
−1.0
nA
V (BR) GDS
VDS = 0, IG = −100 μA
−50
⎯
⎯
V
VDS = 10 V, VGS = 0
1.2
⎯
14
mA
−0.25
⎯
−1.5
V
IDSS
(Note 1)
VDS = 10 V, ID = 0.1 μA
Gate-source cut-off voltage
VGS (OFF)
Forward transfer admittance
⎪Yfs⎪
VDS = 10 V, VGS = 0, f = 1 kHz (Note 2)
5.0
19
⎯
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
13
⎯
pF
Reverse transfer capacitance
Crss
VDG = 10 V, ID = 0, f = 1 MHz
⎯
3
⎯
pF
⎯
80
⎯
Ω
Drain-source ON resistance
RDS (ON)
VDS = 10 mV, VGS = 0
(Note 2)
Note 1: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA
Note 2: Condition of the typical value IDSS = 5 mA
1
2007-11-01