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AD581SH883B

製品説明
仕様・特性

High Precision 10 V IC Reference AD581 FEATURES FUNCTIONAL BLOCK DIAGRAM Laser trimmed to high accuracy 10.000 V ±5 mV (L and U models) Trimmed temperature coefficient 5 ppm/°C maximum, 0°C to 70°C (L model) 10 ppm/°C maximum, −55°C to +125°C (U model) Excellent long-term stability 25 ppm/1000 hrs (noncumulative) −10 V reference capability Low quiescent current: 1.0 mA maximum 10 mA current output capability 3-pin TO-5 package MIL-STD-883 compliant versions available +VS VOUT AD581 TO-5 BOTTOM VIEW 08014-001 GND Figure 1. GENERAL DESCRIPTION The AD581 is a 3-pin, temperature compensated, monolithic, band gap voltage reference that provides a precise 10.00 V output from an unregulated input level ranging from 12 V to 30 V. Laser wafer trimming (LWT) is used to trim both the initial error at +25°C as well as the temperature coefficient, resulting in high precision performance previously available only in expensive hybrids or oven regulated modules. The 5 mV initial error tolerance and 5 ppm/°C guaranteed temperature coefficient of the AD581L is available in a monolithic voltage reference. The band gap circuit design used in the AD581 offers several advantages over classical Zener breakdown diode techniques. Most important, no external components are required to achieve full accuracy and significant stability to low power systems. In addition, total supply current to the device, including the output buffer amplifier (which can supply up to 10 mA) is typically 750 μA. The long-term stability of the band gap design is equivalent to selected Zener reference diodes. The AD581 is recommended for use as a reference for 8-, 10or 12-bit digital-to-analog converters (DACs) that require an external precision reference. The device is also ideal for all types of analog-to-digital converters (ADCs) up to 14-bit accuracy, either successive approximation or integrating designs, and can generally offer better performance than that provided by standard self-contained references. The AD581J, AD581K, and AD581L are specified for operation from 0°C to 70°C; the AD581S, AD581T, and AD581U are specified for the −55°C to +125°C range. All grades are packaged in a hermetically sealed 3-pin TO-5 metal can. PRODUCT HIGHLIGHTS 1. 2. 3. 4. 5. Laser trimming of both initial accuracy and temperature coefficient results in very low errors over temperature without the use of external components. The AD581L has a maximum deviation from 10.000 V of ±7.25 mV from 0°C to 70°C, whereas the AD581U guarantees ±15 mV maximum total error without external trims from −55°C to +125°C. Because the laser trimming is done on the wafer prior to separation into individual chips, the AD581 is extremely valuable to hybrid designers for its ease of use, lack of required external trims, and inherent high performance. The AD581 can also be operated in a 2-pin Zener mode to provide a precision −10 V reference with just one external resistor to the unregulated supply. The performance in this mode is nearly equal to that of the standard 3-pin configuration. Advanced circuit design using the band gap concept allows the AD581 to give full performance with an unregulated input voltage down to 13 V. With an external resistor, the device operates with a supply as low as 11.4 V. The AD581 is available in versions compliant with MILSTD-883. Refer to the military datasheet for detailed specifications. Rev. C Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2009 Analog Devices, Inc. All rights reserved.

ブランド

AD

会社名

Analog Devices

本社国名

U.S.A

事業概要

半導体デバイスを製造するアメリカの多国籍企業。特にADC、DAC、MEMS、DSPなどに強い。現在は 65nm から 3μm のプロセスルールの回路を設計している。

供給状況

 
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