FINAL
Am28F010
1 Megabit (128 K x 8-Bit)
CMOS 12.0 Volt, Bulk Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
s Flasherase™ Electrical Bulk Chip-Erase
s High performance
— 70 ns maximum access time
s CMOS Low power consumption
— One second typical chip-erase
s Flashrite™ Programming
— 30 mA maximum active current
— 10 µs typical byte-program
— 100 µA maximum standby current
— Two seconds typical chip program
— No data retention power consumption
s Compatible with JEDEC-standard byte-wide
32-Pin EPROM pinouts
— 32-pin PDIP
— 32-pin PLCC
— 32-pin TSOP
s 10,000 write/erase cycles minimum
s Write and erase voltage 12.0 V ±5%
s Command register architecture for
microprocessor/microcontroller compatible
write interface
s On-chip address and data latches
s Advanced CMOS flash memory technology
— Low cost single transistor memory cell
s Automatic write/erase pulse stop timer
s Latch-up protected to 100 mA
from –1 V to V CC +1 V
GENERAL DESCRIPTION
The Am28F010 is a 1 Megabit Flash memory organized as 128 Kbytes of 8 bits each. AMD’s Flash
memories offer the most cost-effective and reliable
read/write non-volatile random access memory. The
Am28F010 is packaged in 32-pin PDIP, PLCC, and
TSOP versions. It is designed to be reprogrammed
and erased in-system or in standard EPROM programmers. The Am28F010 is erased when shipped
from the factory.
AMD’s Flash technology reliably stores memory contents even after 10,000 erase and program cycles. The
AMD cell is designed to optimize the erase and programming mechanisms. In addition, the combination of
advanced tunnel oxide processing and low internal
electric fields for erase and programming operations
produces reliable cycling. The Am28F010 uses a
12.0 V ± 5% V PP high voltage input to perform the
Flasherase and Flashrite algorithms.
The standard Am28F010 offers access times as fast as
70 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention,
the Am28F010 has separate chip enable (CE#) and
output enable (OE#) controls.
The highest degree of latch-up protection is achieved
with AMD’s proprietary non-epi process. Latch-up protection is provided for stresses up to 100 milliamps on
address and data pins from –1 V to V CC +1 V.
AMD’s Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
Am28F010 uses a command register to manage this
functionality, while maintaining a JEDEC Flash Standard 32-pin pinout. The command register allows for
100% TTL level control inputs and fixed power supply
levels during erase and programming, while maintaining maximum EPROM compatibility.
Publication# 11559 Rev: I
Issue Date: May 12, 1999
Amendment/0
The Am28F010 is byte programmable using 10 ms programming pulses in accordance with AMD’s Flashrite
programming algorithm. The typical room temperature
programming time of the Am28F010 is two seconds.
The entire chip is bulk erased using 10 ms erase pulses
according to AMD’s Flasherase alrogithm. Typical erasure at room temperature is accomplished in less than
one second. The windowed package and the 15–20
