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AT28C64-12TC

製品説明
仕様・特性

Features • Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs or 1 ms • Self-timed Byte Write Cycle • • • • • • • – Internal Address and Data Latches – Internal Control Timer – Automatic Clear Before Write Direct Microprocessor Control – READY/BUSY Open Drain Output – DATA Polling Low Power – 30 mA Active Current – 100 µA CMOS Standby Current High Reliability – Endurance: 104 or 105 Cycles – Data Retention: 10 Years 5V ± 10% Supply CMOS and TTL Compatible Inputs and Outputs JEDEC Approved Byte-wide Pinout Commercial and Industrial Temperature Ranges 64K (8K x 8) Parallel EEPROMs AT28C64 AT28C64X Description The AT28C64 is a low-power, high-performance 8,192 words by 8-bit nonvolatile electrically erasable and programmable read only memory with popular, easy-to-use features. The device is manufactured with Atmel’s reliable nonvolatile technology. (continued) Pin Configurations Function Addresses CE Chip Enable OE Output Enable WE Write Enable I/O0 - I/O7 Data Inputs/Outputs RDY/BUSY Ready/Busy Output NC No Connect DC Don’t Connect RDY/BUSY (or NC) A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND VCC WE NC A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A7 A12 RDY/BUSY (or NC) DC VCC WE NC 28 27 26 25 24 23 22 21 20 19 18 17 16 15 A6 A5 A4 A3 A2 A1 A0 NC I/O0 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 A8 A9 A11 NC OE A10 CE I/O7 I/O6 I/O1 I/O2 VSS DC I/O3 I/O4 I/O5 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 LCC, PLCC Top View TSOP Top View OE A11 A9 A8 NC WE VCC RDY/BUSY (or NC) A12 A7 A6 A5 A4 A3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 4 3 2 1 32 31 30 A0 - A12 14 15 16 17 18 19 20 Pin Name PDIP, SOIC Top View Rev. 0001H–12/99 Note: PLCC package pins 1 and 17 are DON’T CONNECT. 1

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