Features
• Fast Read Access Time – 120 ns
• Fast Byte Write – 200 µs or 1 ms
• Self-timed Byte Write Cycle
•
•
•
•
•
•
•
– Internal Address and Data Latches
– Internal Control Timer
– Automatic Clear Before Write
Direct Microprocessor Control
– READY/BUSY Open Drain Output
– DATA Polling
Low Power
– 30 mA Active Current
– 100 µA CMOS Standby Current
High Reliability
– Endurance: 104 or 105 Cycles
– Data Retention: 10 Years
5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-wide Pinout
Commercial and Industrial Temperature Ranges
64K (8K x 8)
Parallel
EEPROMs
AT28C64
AT28C64X
Description
The AT28C64 is a low-power, high-performance 8,192 words by 8-bit nonvolatile electrically erasable and programmable read only memory with popular, easy-to-use features. The device is manufactured with Atmel’s reliable nonvolatile technology.
(continued)
Pin Configurations
Function
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
RDY/BUSY
Ready/Busy Output
NC
No Connect
DC
Don’t Connect
RDY/BUSY (or NC)
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
NC
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A7
A12
RDY/BUSY (or NC)
DC
VCC
WE
NC
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A8
A9
A11
NC
OE
A10
CE
I/O7
I/O6
I/O1
I/O2
VSS
DC
I/O3
I/O4
I/O5
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
LCC, PLCC
Top View
TSOP
Top View
OE
A11
A9
A8
NC
WE
VCC
RDY/BUSY (or NC)
A12
A7
A6
A5
A4
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
4
3
2
1
32
31
30
A0 - A12
14
15
16
17
18
19
20
Pin Name
PDIP, SOIC
Top View
Rev. 0001H–12/99
Note: PLCC package pins 1 and 17 are
DON’T CONNECT.
1