DATA SHEET
MOS INTEGRATED CIRCUIT
µPD43256B-X
256K-BIT CMOS STATIC RAM
32K-WORD BY 8-BIT
EXTENDED TEMPERATURE OPERATION
Description
The µPD43256B-X is a high speed, low power, and 262,144 bits (32,768 words by 8 bits) CMOS static RAM.
The µPD43256B-X is an extended-operating-temperature version of the µPD43256B (X version : TA = –25 to +85
°C). And A and B versions are low voltage operations. Battery backup is available.
The µPD43256B-X is packed in 28-pin plastic TSOP (I) (8 x 13.4 mm).
Features
• 32,768 words by 8 bits organization
• Fast access time: 70, 85, 100, 120, 150 ns (MAX.)
• Operating ambient temperature: TA = –25 to +85 °C
• Low voltage operation (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V)
• Low VCC data retention: 2.0 V (MIN.)
• /OE input for easy application
Part number
Access time
Operating supply Operating ambient
ns (MAX.)
Supply current
µPD43256B-xxX
temperature
At operating
At standby
At data retention
V
•
voltage
°C
mA (MAX.)
µA (MAX.)
µA (MAX.) Note1
−25 to +85
45
50
2
70, 85
4.5 to 5.5
µPD43256B-AxxX
85 Note2, 100, 120 Note2
3.0 to 5.5
µPD43256B-BxxX Note2
100, 120 Note2, 150 Note2
2.7 to 5.5
40
Notes 1. TA ≤ 40 °C, VCC = 3.0 V
2. 100 s (MAX.) (VCC = 4.5 to 5.5 V)
Version X
This Data sheet can be applied to the version X. Each version is identified with its lot number. Letter X in the fifth
character position in a lot number signifies version X.
JAPAN
D43256B-X
Lot number
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M11012EJ4V0DSJ1 (4th edition)
Date Published December 2000 NS CP (K)
Printed in Japan
The mark 5 shows major revised points.
©
1995
