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RUM003N02T2L
RUM003N02 Transistor 1.8V Drive Nch MOSFET RUM003N02 Dimensions (Unit : mm) Structure Silicon N-channel MOSFET VMT3 Applications Switching (1)Base(IN)(Gate) Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. (2)Emitter(GND)(Source) (3)Collector(OUT)(Drain) Abbreviated symbol : QT Packaging specifications Package Equivalent circuit Taping Code T2L Basic ordering unit (pieces) Type Drain 8000 RUM003N02 Gate Absolute maximum ratings (Ta=25°C) Parameter ∗2 ∗1 Symbol Limits Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS ±8 V ID ±300 mA IDP∗1 ±600 mA PD∗2 150 mW Continuous Drain current Pulsed Total power dissipation Channel temperature Tch 150 °C Range of storage temperature Tstg −55 to +150 Source ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land Thermal resistance Parameter Channel to ambient Symbol Limits Unit Rth(ch-a) ∗ 833 °C / W ∗ Each terminal mounted on a recommended land Rev.B 1/3
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