NOT RECOMMENDED FOR NEW DESIGNS
DS1220Y
16k Nonvolatile SRAM
www.maxim-ic.com
FEATURES
PIN ASSIGNMENT
10 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Directly replaces 2k x 8 volatile static RAM
or EEPROM
Unlimited write cycles
Low-power CMOS
JEDEC standard 24-pin DIP package
Read and write access times as fast as 100 ns
Full ±10% operating range
Optional industrial temperature range of
-40°C to +85°C, designated IND
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
16
15
14
13
VCC
A8
A9
WE
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
24-Pin ENCAPSULATED PACKAGE
720-mil EXTENDED
PIN DESCRIPTION
A0-A10
DQ0-DQ7
CE
WE
OE
VCC
GND
- Address Inputs
- Data In/Data Out
- Chip Enable
- Write Enable
- Output Enable
- Power (+5V)
- Ground
DESCRIPTION
The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048
words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that
constantly monitor VCC for an out-of-tolerance condition. When such a condition occurs, the lithium
energy source is automatically switched on and write protection is unconditionally enabled to prevent
data corruption. The NV SRAM can be used in place of existing 2k x 8 SRAMs directly conforming to
the popular bytewide 24-pin DIP standard. The DS1220Y also matches the pinout of the 2716 EPROM or
the 2816 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the
number of write cycles that can be executed and no additional support circuitry is required for
microprocessor interfacing.
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