EM6K1
Transistor
2.5V Drive Nch+Nch MOS FET
EM6K1
External dimensions (Unit : mm)
Structure
Silicon N-channel MOS FET
EMT6
1.6
0.5
1.0
0.5 0.5
Features
1) Two 2SK3019 transistors in a single EMT package.
2) The MOS FET elements are independent, eliminating
mutual interference.
3) Mounting cost and area can be cut in half.
4) Low on-resistance.
5) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
(6) (5) (4)
1.6
1.2
1pin mark
(1) (2) (3)
0.22
0.13
Each lead has same dimensions
Abbreviated symbol : K1
Applications
Interfacing, switching (30V, 100mA)
Packaging specifications
Package
Equivalent circuit
Code
(5)
T2R
Basic ordering unit
(pieces)
Type
(6)
Taping
8000
Gate
Protection
Diode
∗
(4)
Tr1
EM6K1
Tr2
(1)
∗
Gate
Protection
Diode
(2)
(3)
(1)Tr1
(2)Tr1
(3)Tr2
(4)Tr2
(5)Tr2
(6)Tr1
Source
Gate
Drain
Source
Gate
Drain
∗ A protection diode has been built in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
Absolute maximum ratings (Ta=25°C)
Symbol
Limits
Unit
Drain−source voltage
VDSS
30
V
Gate−source voltage
VGSS
±20
V
Continuous
ID
±100
mA
Pulsed
IDP ∗1
±400
mA
∗2
150
mW / TOTAL
120
mW / ELEMENT
Parameter
Drain current
PD
Total power dissipation
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 With each pin mounted on the recommended lands.
Rev.C
1/3
