POWEREX
MITSUBISHI SEMICONDUCTOR
M54562P/FP
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54562P and M54562FP are eight-circuit output-sourcing
Darlington transistor arrays. The circuits are made of PNP
and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.
PIN CONFIGURATION
INPUT
FEATURES
High breakdown voltage (BV CEO ≥ 50V)
High-current driving (Io(max) = –500mA)
With output clamping diodes
Driving available with PMOS IC output of 6 ~ 16V or with TTL output
Wide operating temperature range (Ta = –20 to +75°C)
Output current-sourcing type
IN1→ 1
18 →O1
IN2→ 2
17 →O2
IN3→ 3
16 →O3
IN4→ 4
15 →O4
IN5→ 5
14 →O5
IN6→ 6
13 →O6
IN7→ 7
12 →O7
IN8→ 8
11 →O8
VS
9
OUTPUT
10 GND
Package type 18P4G(P)
NC
INPUT
APPLICATION
Drives of relays, printers, LEDs, fluorescent display tubes
and lamps, and interfaces between MOS-bipolar logic systems and relays, solenoids, or small motors
FUNCTION
The M54562P and M54562FP each have eight circuits,
which are made of input inverters and current-sourcing outputs. The outputs are made of PNP transistors and NPN
Darlington transistors. The PNP transistor base current is
constant. A spike-killer clamping diode is provided between
each output and GND. V S and GND are used commonly
among the eight circuits.
The inputs have resistance of 8.5kΩ, and voltage of up to
30V is applicable. Output current is 500mA maximum. Supply voltage V S is 50V maximum.
The M54562FP is enclosed in a molded small flat package,
enabling space-saving design.
1
20
NC
IN1→ 2
19 → O1
IN2→ 3
18 → O2
IN3→ 4
17 → O3
IN4→ 5
16 → O4
IN5→ 6
15 → O5
IN6→ 7
14 → O6
IN7→ 8
13 → O7
IN8→ 9
12 → O8
VS
10
OUTPUT
11 GND
Package type 20P2N-A(FP)
NC : No connection
CIRCUIT DIAGRAM
VS
20K
8.5K
INPUT
7.2K
1.5K
3K
OUTPUT
GND
The eight circuits share the VS and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
Aug. 1999
