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LM6361N
LM6161/LM6261/LM6361 High Speed Operational Amplifier General Description The LM6161 family of high-speed amplifiers exhibits an excellent speed-power product in delivering 300 V/µs and 50 MHz unity gain stability with only 5 mA of supply current. Further power savings and application convenience are possible by taking advantage of the wide dynamic range in operating supply voltage which extends all the way down to +5V. These amplifiers are built with National’s VIP™ (Vertically Integrated PNP) process which provides fast PNP transistors that are true complements to the already fast NPN devices. This advanced junction-isolated process delivers high speed performance without the need for complex and expensive dielectric isolation. Features n High slew rate 300 V/µs n n n n n n n n High unity gain freq 50 MHz Low supply current 5 mA Fast settling 120 ns to 0.1% Low differential gain < 0.1% Low differential phase 0.1˚ Wide supply range 4.75V to 32V Stable with unlimited capacitive load Well behaved; easy to apply Applications n n n n n Video amplifier High-frequency filter Wide-bandwidth signal conditioning Radar Sonar Connection Diagrams 10–Lead Flatpak DS009057-13 See NS Package Number W10A DS009057-5 See NS Package Number J08A, N08E or M08A Temperature Range Package Military Industrial −55˚C ≤ TA ≤ +125˚C −25˚C ≤ TA ≤ +85˚C LM6361N 8-Pin N08E 0˚C ≤ TA ≤ +70˚C LM6261N NSC Drawing Commercial Molded DIP LM6161J/883 LM6361J 5962-8962101PA 8-Pin J08A Ceramic DIP LM6261M LM6361M 8-Pin Molded M08A Surface Mt. LM6161WG/883 10-Lead 5962-8962101XA Ceramic SOIC LM6161W/883 10-Pin 5962-8962101HA WG10A W10A Ceramic Flatpak VIP™ is a trademark of National Semiconductor Corporation. © 1999 National Semiconductor Corporation DS009057 www.national.com LM6161/LM6261/LM6361 High Speed Operational Amplifier May 1999
MITSUBISHI
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RENESAS
ルネサス エレクトロニクス株式会社
日本
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