TAK CHEONG
®
PRE LIM INAR Y DA TAS HEET
150mW SOT-523 SURFACE MOUNT
2SC4617
Green Product
Plastic Package
NPN Silicon General Purpose Transistor
3
Absolute Maximum Ratings
Symbol
TA = 25°C unless otherwise noted
Parameter
2
Value
Units
PC
Collector Power Dissipation
150
mW
TSTG
Storage Temperature Range
-55 to +150
°C
+150
°C
TJ
Operating Junction Temperature
VCBO
Collector-Base Voltage
50
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
100
SOT-523
V
VCEO
1
mA
IC
Collector Current - Continuous
These ratings are limiting values above which the serviceability of the diode may be impaired.
Electrical Symbol:
Specification Features:
Device Marking Code:
Low Cob = 2.0pF (Typical)
Low Vce(sat) < 0.4V
B9
RoHS Compliant
Green EMC
Matte Tin(Sn) Lead Finish
Weight: approx. 0.002g
TA = 25°C unless otherwise noted
Electrical Characteristics
Symbol
Parameter
Test Condition
Limits
Min
Typ
Max
Unit
V(BR)CBO
Collector-Base Breakdown Voltage
IC=50uA, IE=0A
50
Volts
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC=1mA, IB=0A
50
Volts
V(BR)EBO
Emitter-Base Breakdown Voltage
IE=50uA, IC=0A
5
Volts
ICBO
Collector Cut-off Current
VCB=50V, IE=0A
0.1
µA
IEBO
Emitter Cut-off Current
VEB=5V, IC=0A
0.1
µA
hFE
DC Current Gain
VCE=6V, IC=1mA
560
---
Collector-Emitter Saturation Voltage
IC=50mA, IB=5mA
0.4
Volts
Transition Frequency
VCE =5V, IC=10mA
f=30MHz
280
MHz
Collector Output Capacitance
VCB =12V, IE =0A,
f=1MHz
2.0
pF
VCE(sat)
fT
COB
120
DB Number: DB-245
June 2013, Preliminary Datasheet
Page 1