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MG200H2YS1
MG200H2YS1 Transistors Half Bridge IGBT Power Module Isolated Case (Y/N)Yes Circuits Per Package1 V(BR)CES (V)500 V(BR)GES (V)20 I(C) Max. (A)200 Absolute Max. Power Diss. (W)800 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case156m I(CES) Min. (A)1.0m @V(CES) (V) (Test Condition)500 I(GES) Max. (A)500n @V(GES) (V) (Test Condition)20 V(CE)sat Max. (V)5.0 @I(C) (A) (Test Condition)200 @V(GE) (Test Condition)15 V(GE)th Max. (V) @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) g(fe) Min. (S) Trans. admitt. g(fe) Max. (S) Trans. admitt.
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