BSP171P
SIPMOS® Small-Signal-Transistor
Product Summary
Features
V DS
0.3
Ω
ID
• Enhancement mode
V
R DS(on),max
• P-Channel
-60
-1.9
A
• Logic level
• Avalanche rated
• dv /dt rated
PG-SOT223
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
• Halogenfree according to IEC61249221
Type
Package
Tape and Reel Information
Marking
Packaging
BSP171P
PG-SOT223
H6327: 1000 pcs/reel
BSP171P
Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
steady state
ID
T A=25 °C1)
-1.9
T A=70 °C1)
Continuous drain current
-1.5
-7.6
A
Pulsed drain current
I D,pulse
T A=25 °C
Avalanche energy, single pulse
E AS
I D=-1.9 A, R GS=25 Ω
70
mJ
Reverse diode dv /dt
dv /dt
I D=-1.9 A,
V DS=-48 V,
di /dt =-200 A/µs,
T j,max=150 °C
-6
kV/µs
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
±20
1.8
W
-55 ... 150
T A=25 °C1)
V
°C
IEC climatic category; DIN IEC 68-1
55/150/56
ESD Class; JESD22-A114-HBM
Class 1a
Rev 2.7
page 1
2012-11-26
