SS32-SS315
SCHOTTKY BARRIER RECTIFIERS
PRODUCT SUMMARY
3.0 AMPS Surface Mount
SMC/DO-214AB
.126(3.20)
.114(2.90)
FEATURES
.245(6.22)
.220(5.59)
For surface mounted application
Easy pick and place
Metal to silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low VF
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Epitaxial construction
High temperature soldering:
o
260 C / 10 seconds at terminals
.280(7.11)
.260(6.60)
.012(.31)
.006(.15)
.103(2.62)
.079(2.00)
.008(.20)
.004(.10)
.063(1.6)
.039(1.0)
.320(8.13)
.305(7.75)
MECANICAL DATA
Dimensions in inches and (millimeters)
Case: JEDEC DO-214AB Molded plastic
Terminals: Pure tin plated, lead free.
Polarity: Indicated by cathode band
Packaging: 16mm tape per EIA STD RS-481
Weight: 0.21gram
Pb-free; RoHS-compliant
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol SS
32
Maximum Recurrent Peak Reverse Voltage VRRM
20
Maximum RMS Voltage
14
VRMS
Maximum DC Blocking Voltage
20
VDC
Type Number
Maximum Average Forward Rectified
Current at TL(See Fig. 1)
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
(Note 1)
IF= 3.0A @ 25oC
@ 100oC
o
Maximum DC Reverse Current @ TA =25 C at
o
Rated DC Blocking Voltage
@ TA=125 C
Typical Thermal Resistance ( Note 2 )
SS
33
30
21
30
SS
34
40
28
40
SS
36
60
42
60
IFSM
100
VF
0.5
0.4
IR
SS
39
90
63
90
SS
310
100
70
100
SS Units
315
150
V
105
V
150
V
3.0
I(AV)
A
70
0.75
0.65
0.5
10
R θJL
R θJA
Operating Temperature Range
TJ
-55 to +125
Storage Temperature Range
TSTG
Notes:
1. Pulse Test with PW=300 usec, 1% Duty Cycle
04/05/2007 Rev.1.00
SS
35
50
35
50
5
17
55
V
0.85
0.95
0.70
0.80
0.1
0.5
-55 to +150
-55 to +150
www.SiliconStandard.com
A
mA
mA
o
C/W
o
o
C
C
1
