MP6301
TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type
(Six Darlington Power Transistors inOne)
MP6301
Industrial Applications
High Power Switching Applications
3-Phase Motor Drive and Bipolar Drive of Pulse Motor
•
Small package by full molding (SIP 12 pins)
•
High collector power dissipation (6-device operation)
: PT = 4.4 W (Ta = 25°C)
•
High collector current: IC (DC) = ±3 A (max)
•
Unit: mm
High DC current gain: hFE = 2000 (min) (VCE = ±2 V, IC = ±1 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Rating
Symbol
NPN
PNP
Unit
Collector-base voltage
VCBO
100
−100
V
Collector-emitter voltage
VCEO
80
−80
V
Emitter-base voltage
VEBO
8
−8
V
DC
IC
3
−3
Pulse
ICP
5
−5
Continuous base current
IB
0.5
−0.5
Collector power dissipation
(1-device operation)
PC
Collector power dissipation
(6-device operation)
Junction temperature
Collector current
A
―
JEITA
―
2.0
W
TOSHIBA
PT
4.4
W
Tj
150
°C
Tstg
Storage temperature range
JEDEC
A
−55 to 150
°C
2-32C1F
Weight: 3.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Array Configuration
12
R1 R2
4
7
3
6
5
2
10
8
9
R1 R2
1
R1 ≈ 4.5 kΩ, R2 ≈ 300 Ω
11
1
2006-10-27
