JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
2SC2655
TRANSISTOR (NPN)
TO-92L
FEATURES
Low Saturation Voltage: VCE(sat)=0.5V(Max)(IC=1A)
High Speed Switching Time: tstg=1μs(Typ.)
Complementary to 2SA1020
1.EMITTER
2.COLLECTOR
3.BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Symbol
Unit
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current –Continuous
2
A
PC
Collector Power Dissipation
0.9
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=50V,IE=0
1
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
1
μA
hFE(1)
VCE=2V,IC=500mA
70
hFE(2)
VCE=2V,IC=1.5A
40
Collector-emitter saturation voltage
VCE(sat)
IC=1A,IB=0.05A
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=1A,IB=0.05A
1.2
V
fT
VCE=2V,IC=0.5A
100
MHz
VCB=10V,IE=0,f=1MHz
30
pF
DC current gain
Transition frequency
Collector output capacitance
Cob
Tune on Time
Switch time
ton
Storage Time
tstg
Fall Time
VCC=30V,Ic=1A,
IB1=-IB2=0.05A
tf
240
0.15
2
μs
0.15
CLASSIFICATION OF hFE(1)
Rank
Range
O
Y
70-140
120-240
A,Jun,2011
