HAT2131R
Silicon N Channel Power MOS FET
Power Switching
REJ03G1815-0100
Rev.1.00
Jul 17, 2009
Features
•
•
•
•
Low on-resistance
Low drive current
High density mounting
Capable of 4 V gate drive
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 )
5 6 7 8
D D D D
65
87
4
G
3
12
1, 2, 3
4
5, 6, 7, 8
4
Source
Gate
Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
ID (pulse) Note1
IDR
IDR (pulse) Note1
Pch Note2
Tch
Tstg
Ratings
350
±20
0.9
7.2
0.9
7.2
2.5
150
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
REJ03G1815-0100 Rev.1.00 Jul 17, 2009
Page 1 of 6
Unit
V
V
A
A
A
A
W
°C
°C
