2SK3662
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSII)
2SK3662
Switching Regulator, DC−DC Converter, Motor Drive
Applications
•
Unit: mm
Low drain-source ON-resistance: RDS (ON) = 9.4 mΩ (typ.)
•
High forward transfer admittance: |Yfs| = 55 S (typ.)
•
Low leakage current: IDSS = 100 μA (max) (VDS = 60 V)
•
Enhancement mode : Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
60
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
60
V
Gate-source voltage
VGSS
±20
V
(Note 1)
ID
35
Pulse (Note 1)
IDP
105
Drain power dissipation (Tc = 25°C)
PD
35
W
Single pulse avalanche energy
(Note 2)
EAS
204
mJ
Avalanche current
IAR
35
A
EAR
3.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
DC
Drain current
Repetitive avalanche energy
(Note 3)
A
JEDEC
―
JEITA
TOSHIBA
SC-67
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
3.57
°C/ W
Thermal resistance, channel to ambient
Rth (ch−a)
62.5
°C/ W
Note 1:
Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 227 μH, IAR = 35 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2009-12-21
