Data Sheet
Medium Power Transistor (50V,0.5A)
2SC1741AS
Features
1) High current.(IC=5A)
2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.
Dimensions (Unit : mm)
SPT
(SC-72)
Packaging specifications and hFE
(1) (2) (3)
Type
2SC1741AS
Package
hFE
SPT
(1) Emitter
(2) Collector
(3) Bace
QR
Marking
-
Code
TP
Basic ordering unit (pleces)
5000
Absolute maximum rationgs (Ta=25 C)
Parameter
Symbol
VCBO
Limits
Unit
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
0.5
A
Collector power dissipation
PC
0.3
W
Collector-base voltage
Junction temperature
Tj
150
C
Storage temperature
Tstg
-55 to +150
C
Electrical characteristics (Ta=25 C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector outoff current
Emitter cutoff current
DC current rransfer ratio
Symbol
BVCBO
Min.
Typ.
Max.
Unit
50
BVCEO
BVEBO
ICBO
50
5
-
-
-
0.5
V
V
V
IC=100 A
IC=1mA
IE=100 A
A
A
VCB=30V
hFE
120
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
-
fT
Output capacitance
Cob
-
IEBO
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
250
0.5
390
0.4
-
6.5
1/2
V
MHz
pF
Conditions
VEB=4V
VCE/IC=3V/0.1A
IC/IB=150mA/15mA
VCE=5V , IE=-20mA , f=100MHz
VCB=10V , IE=0A , f=1MHz
2011.06 - Rev. B
