DATA SHEET
COMPOUND TRANSISTOR
BA1F4Z
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
FEATURES
PACKAGE DRAWING (UNIT: mm)
• On-chip bias resistor
(R1 = 22 kΩ)
• Complementary transistor with BN1F4Z
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Symbol
Ratings
Unit
Collector to base voltage
Parameter
VCBO
60
V
Collector to emitter voltage
VCEO
50
V
Emitter to base voltage
VEBO
5
V
Collector current (DC)
IC(DC)
100
mA
Collector current (Pulse)
IC(pulse) *
200
mA
Total power dissipation
PT
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
* PW ≤ 10 ms, duty cycle ≤ 50 %
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Symbol
Collector cutoff current
ICBO
Conditions
MIN.
TYP.
MAX.
Unit
100
nA
600
−
VCB = 50 V, IE = 0
DC current gain
hFE1 **
VCE = 5.0 V, IC = 5.0 mA
135
330
DC current gain
hFE2 **
VCE = 5.0 V, IC = 50 mA
100
290
Collector saturation voltage
−
VCE(sat) **
IC = 5.0 mA, IB = 0.25 mA
0.04
0.2
V
Low level input voltage
VIL **
VCE = 5.0 V, IC = 100 µA
0.55
0.5
V
High level input voltage
VIH **
VCE = 0.2 V, IC = 5.0 mA
3.0
1.05
15.4
22
V
Input resistance
R1
28.6
kΩ
Turn-on time
ton
VCC = 5.0 V, RL = 1.0 kΩ
0.2
µs
Storage time
tstg
VI = 5.0 V, PW = 2.0 µs
5.0
µs
toff
duty cycle≤2 %
6.0
µs
Turn-off time
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2 %
hFE CLASSIFICATION
Marking
Q
P
K
hFE1
135 to 270
200 to 400
300 to 600
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16174EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
