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部品型式

SM25JZ51F

製品説明
仕様・特性

SM25GZ51, SM25JZ51 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR ILICON PLANAR TYPE SM25GZ51, SM25JZ51 AC POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 400V, 600V R.M.S On−State Current: IT (RMS) = 25A High Commutating (dv / dt): (dv / dt) c = 10V / μs Isolation Voltage: VIsol = 1500V AC ABSOLUTE MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off−State Voltage SYMBOL SM25GZ51 SM25JZ51 VDRM R.M.S On−State Current (Full Sine Waveform Tc = 73°C) IT (RMS) Peak One Cycle Surge On−State Current (Non-Repetitive) ITSM 2 2 I t Limit Value RATING 400 600 25 230 (50Hz) 253 (60Hz) UNIT V A A 2 I t 260 A s di / dt 50 A / μs PGM 5 W TOSHIBA PG (AV) 0.5 W Weight: 5.9 g (typ.) Peak Gate Voltage VGM 10 V Peak Gate Current IGM 2 A Tj −40~125 °C Storage Temperature Range Tstg −40~125 °C Isolation Voltage (AC, t = 1 min.) VIsol 1500 V Critical Rate of Rise of On−State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Junction Temperature JEDEC ― JEITA ― 13-16A1A Note 1: di / dt Test Condition VDRM = 0.5 × Rated ITM ≤ 40A tgw ≥ 10μs tgr ≤ 250ns igp = IGT × 2.0 Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-10-30

ブランド

TOSHIBA

会社名

株式会社 東芝セミコンダクター&ストレージ社

本社国名

日本

事業概要

半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI

供給状況

 
Not pic File
データシート
pdf
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