This product complies with the RoHS Directive (EU 2002/95/EC).
DRA9A14E
Silicon PNP epitaxial planar type
For digital circuits
Complementary to DRC9A14E
DRA5A14E in SSMini3 type package
Features
Package
Low collector-emitter saturation voltage VCE(sat)
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Code
SSMini3-F3-B
Name
Pin
1: Base
2: Emitter
3: Collector
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Marking Symbol: GH
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
VCBO
–50
V
VCEO
–50
V
Collector current
IC
–80
mA
Total power dissipation
PT
125
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
Internal Connection
°C
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
B
C
R1
R2
Resistance value
E
R1
R2
10
10
kΩ
kΩ
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = –10 µA, IE = 0
–50
V
Collector-emitter voltage (Base open)
VCEO
IC = –2 mA, IB = 0
–50
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = –50 V, IE = 0
– 0.1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = –50 V, IB = 0
– 0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = –6 V, IC = 0
– 0.5
mA
Forward current transfer ratio
hFE
VCE = –10 V, IC = –5 mA
Collector-emitter saturation voltage
VCE(sat)
VI(on)
VCE = – 0.2 V, IC = –5 mA
Input voltage (OFF)
VI(off)
IC = –10 mA, IB = – 0.5 mA
Input voltage (ON)
35
– 0.25
VCE = –5 V, IC = –100 µA
–2.1
V
V
– 0.8
V
Input resistance
R1
–30%
10
+30%
kΩ
Resistance ratio
R1 / R2
0.8
1.0
1.2
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: September 2011
Ver. BED
1
