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IRF8113TR
PD - 94637B IRF8113 HEXFET® Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS(on) max 30V 5.6m:@VGS = 10V 24nC A A D S Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG Qg Typ. 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Absolute Maximum Ratings Max. Units VDS Drain-to-Source Voltage Parameter 30 V VGS Gate-to-Source Voltage ± 20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 17.2 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 13.8 IDM Pulsed Drain Current 135 f f c PD @TA = 25°C Power Dissipation PD @TA = 70°C Power Dissipation TJ Linear Derating Factor Operating Junction and TSTG A Storage Temperature Range W 2.5 1.6 0.02 -55 to + 150 W/°C °C Thermal Resistance Parameter RθJL RθJA g Junction-to-Ambient fg Junction-to-Drain Lead Typ. Max. Units ––– 20 °C/W ––– 50 Notes through are on page 10 www.irf.com 1 6/30/05
IR
International Rectifier
U.S.A
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