Power Transistor Arrays
PUA3110 (PU3110)
Silicon NPN triple diffusion planar type
For power amplification/switching
Complementary to PUA3210 (PU3210)
Unit: mm
8.0±0.2
4.0±0.2
0.8±0.25
0.5±0.15
1.0±0.25
2.54±0.2
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• High forward current transfer ratio hFE which has satisfactory linearity
• Low collector-emitter saturation voltage VCE(sat)
• NPN 3 elements
Solder Dip
5.3±0.5
4.4±0.5
■ Features
9.5±0.2
1.65±0.2
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20.2±0.3
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol
Rating
VCBO
60
V
Collector-emitter voltage (Base open)
VCEO
60
V
Emitter-base voltage (Collector open)
VEBO
6
V
3
A
5
A
1
A
15
7 × 2.57 = 17.78±0.25
Unit
Collector-base voltage (Emitter open)
0.5±0.15
W
Collector current
IC
Peak collector current
ICP
Base current
IB
Collector power dissipation
PC
Ta = 25°C
C 1.5±0.5
1: Emitter
2: Base
3: Collector
1 2 3 4 5 6 7 8
4: Base
5: Collector
6: Base
7: Collector
8: Emitter
SIP8-A1 Package
2.4
150
Junction temperature
Tj
Storage temperature
Tstg
°C
−55 to +150
°C
■ Electrical Characteristics TC = 25°C ± 3°C
Symbol
VCEO
Conditions
Min
Typ
Max
Unit
IC = 30 mA, IB = 0
VBE
VCE = 4 V, IC = 3 A
1.8
V
Collector-emitter current (E-B short)
ICES
VCE = 60 V, VBE = 0
200
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 30 V, IB = 0
300
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0
1
mA
hFE1
VCE = 4 V, IC = 1 A
70
250
hFE2
VCE = 4 V, IC = 3 A
10
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Parameter
Collector-emitter voltage (Base open)
an
Base-emitter voltage
int
en
Forward current transfer ratio
Ma
Collector-emitter saturation voltage
VCE(sat)
60
V
IC = 3 A, IB = 0.375 A
1.2
V
fT
VCE = 10 V, IC = 0.5 A, f = 10 MHz
30
MHz
Turn-on time
ton
IC = 1 A
0.5
µs
Storage time
tstg
IB1 = 0.1 A, IB2 = − 0.1 A
2.5
µs
Fall time
tf
VCC = 50 V
0.4
µs
Transition frequency
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
■ Internal Connection
5
3
2
4
1
Publication date: March 2004
7
6
8
Note) The part number in the parenthesis shows conventional part number.
SJK00001AED
1
