IS61C256AH
32K x 8 HIGH-SPEED CMOS STATIC RAM
FEATURES
• High-speed access time: 10, 12, 15, 20 ns
• Low active power: 400 mW (typical)
• Low standby power
— 250 µW (typical) CMOS standby
— 55 mW (typical) TTL standby
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 5V power supply
• Lead-free available
AUGUST 2009
DESCRIPTION
The ISSI IS61C256AH is a very high-speed, low power,
32,768 word by 8-bit static RAMs. They are fabricated using
ISSI's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design
techniques, yields access times as fast as 10 ns maximum.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 250 µW (typical) with CMOS input levels.
Easy memory expansion is provided by using an active
LOW Chip Enable (CE) input and an active LOW Output
Enable (OE) input. The active LOW Write Enable (WE)
controls both writing and reading of the memory.
The IS61C256AH is pin compatible with other 32K x 8
SRAMs and are available in 28-pin SOJ and TSOP (Type I)
packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A14
DECODER
32K X 8
MEMORY ARRAY
VCC
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CE
OE
CONTROL
CIRCUIT
WE
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. S
08/24/09
1
