HN58V65AI Series
HN58V66AI Series
HN58V65A-SR Series
HN58V66A-SR Series
64k EEPROM (8-kword × 8-bit)
Ready/Busy function, RES function (HN58V66A)
Wide Temperature Range version
REJ03C0153-0300Z
(Previous ADE-203-759B(Z) Rev.2.0)
Rev. 3.00
Feb.02.2004
Description
Renesas Technology’s HN58V65A series and HN58V66A series are electrically erasable and
programmable EEPROM’s organized as 8192-word × 8-bit. They have realized high speed, low power
consumption and high reliability by employing advanced MNOS memory technology and CMOS process
and circuitry technology. They also have a 64-byte page programming function to make their write
operations faster.
Features
• Single supply: 2.7 to 5.5 V
• Access time:
100 ns (max) at 2.7 V ≤ VCC < 4.5 V
70 ns (max) at 4.5 V ≤ VCC ≤ 5.5 V
• Power dissipation:
Active: 20 mW/MHz (typ)
Standby: 110 µW (max)
• On-chip latches: address, data, CE, OE, WE
• Automatic byte write: 10 ms (max)
• Automatic page write (64 bytes): 10 ms (max)
• Ready/Busy
• Data polling and Toggle bit
• Data protection circuit on power on/off
Rev.3.00, Feb.02.2004, page 1 of 26
