SSM6J53FE
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6J53FE
○ High-Speed Switching Applications
○ Power Management Switch Applications
Unit : mm
1.6±0.05
Suitable for high-density mounting due to compact package
•
Low on-resistance : Ron = 136 mΩ (max) (@VGS = -2.5 V)
6
2
5
4
Absolute Maximum Ratings (Ta = 25°C)
Symbol
Rating
Drain-Source voltage
VDS
-20
V
Gate-Source voltage
VGSS
±8
V
DC
ID
-1.8
Pulse
IDP
-3.6
Drain current
Drain power dissipation
PD (Note 1)
Unit
0.55±0.05
Characteristics
0.12±0.05
1.0±0.05
1.6±0.05
: Ron = 364 mΩ (max) (@VGS = -1.5 V)
1
3
: Ron = 204 mΩ (max) (@VGS = -1.8 V)
0.5
•
0.5
1.5 V drive
0.2±0.05
1.2±0.05
•
A
500
1,2,5,6 :Drain
3 :Gate
4 :Source
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
ES6
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
⎯
temperature, etc.) may cause this product to decrease in the
JEITA
⎯
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-2N1A
absolute maximum ratings.
Weight: 7.0 mg (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
Note:
Electrical Characteristics (Ta = 25°C)
Characteristics
Drain-Source breakdown voltage
Symbol
Test Condition
Min
Typ.
Max
V (BR) DSS
ID = −1 mA, VGS = 0
−20
⎯
⎯
V (BR) DSX
ID = −1 mA, VGS = +8 V
−12
⎯
⎯
Unit
V
Drain cut-off current
IDSS
VDS = −20 V, VGS = 0
⎯
⎯
−10
μA
Gate leakage current
IGSS
VGS = ± 8 V, VDS = 0
⎯
⎯
±1
μA
Gate threshold voltage
Vth
VDS = −3 V, ID = −1 mA
−0.3
⎯
−1.0
V
Forward transfer admittance
|Yfs|
VDS = −3 V, ID = −0.9 A
(Note 2)
2.7
5.4
⎯
S
ID = −1.0 A, VGS = −2.5 V
(Note 2)
⎯
95
136
Drain-Source on-resistance
RDS (ON)
ID = −1.0 A, VGS = −1.8 V
(Note 2)
⎯
122
204
ID = −0.1 A, VGS = −1.5 V
(Note 2)
⎯
137
364
⎯
568
⎯
⎯
75
⎯
⎯
67
⎯
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
VDS = −10 V, VGS = 0
f = 1 MHz
Turn-on time
ton
VDD = −10 V, ID = −0.9 A
⎯
29
⎯
Turn-off time
Switching time
toff
VGS = 0 ~ −2.5 V, RG = 4.7 Ω
⎯
39
⎯
⎯
10.6
7.4
⎯
⎯
3.3
⎯
⎯
0.8
1.2
pF
⎯
⎯
mΩ
Total gate charge
Qg
Gate-Source charge
Qgs
Gate-Drain charge
Qgd
Drain-Source forward voltage
VDSF
VDS = −16 V, IDS = -1.8 A,
VGS = − 4 V
ID = 1.8 A, VGS = 0
(Note 2)
ns
nC
V
Note 2: Pulse test
1
2007-11-01