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SSM6J53FETE85L,F

製品説明
仕様・特性

SSM6J53FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6J53FE ○ High-Speed Switching Applications ○ Power Management Switch Applications Unit : mm 1.6±0.05 Suitable for high-density mounting due to compact package • Low on-resistance : Ron = 136 mΩ (max) (@VGS = -2.5 V) 6 2 5 4 Absolute Maximum Ratings (Ta = 25°C) Symbol Rating Drain-Source voltage VDS -20 V Gate-Source voltage VGSS ±8 V DC ID -1.8 Pulse IDP -3.6 Drain current Drain power dissipation PD (Note 1) Unit 0.55±0.05 Characteristics 0.12±0.05 1.0±0.05 1.6±0.05 : Ron = 364 mΩ (max) (@VGS = -1.5 V) 1 3 : Ron = 204 mΩ (max) (@VGS = -1.8 V) 0.5 • 0.5 1.5 V drive 0.2±0.05 1.2±0.05 • A 500 1,2,5,6 :Drain 3 :Gate 4 :Source mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C ES6 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC ⎯ temperature, etc.) may cause this product to decrease in the JEITA ⎯ reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the TOSHIBA 2-2N1A absolute maximum ratings. Weight: 7.0 mg (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) Note: Electrical Characteristics (Ta = 25°C) Characteristics Drain-Source breakdown voltage Symbol Test Condition Min Typ. Max V (BR) DSS ID = −1 mA, VGS = 0 −20 ⎯ ⎯ V (BR) DSX ID = −1 mA, VGS = +8 V −12 ⎯ ⎯ Unit V Drain cut-off current IDSS VDS = −20 V, VGS = 0 ⎯ ⎯ −10 μA Gate leakage current IGSS VGS = ± 8 V, VDS = 0 ⎯ ⎯ ±1 μA Gate threshold voltage Vth VDS = −3 V, ID = −1 mA −0.3 ⎯ −1.0 V Forward transfer admittance |Yfs| VDS = −3 V, ID = −0.9 A (Note 2) 2.7 5.4 ⎯ S ID = −1.0 A, VGS = −2.5 V (Note 2) ⎯ 95 136 Drain-Source on-resistance RDS (ON) ID = −1.0 A, VGS = −1.8 V (Note 2) ⎯ 122 204 ID = −0.1 A, VGS = −1.5 V (Note 2) ⎯ 137 364 ⎯ 568 ⎯ ⎯ 75 ⎯ ⎯ 67 ⎯ Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss VDS = −10 V, VGS = 0 f = 1 MHz Turn-on time ton VDD = −10 V, ID = −0.9 A ⎯ 29 ⎯ Turn-off time Switching time toff VGS = 0 ~ −2.5 V, RG = 4.7 Ω ⎯ 39 ⎯ ⎯ 10.6 7.4 ⎯ ⎯ 3.3 ⎯ ⎯ 0.8 1.2 pF ⎯ ⎯ mΩ Total gate charge Qg Gate-Source charge Qgs Gate-Drain charge Qgd Drain-Source forward voltage VDSF VDS = −16 V, IDS = -1.8 A, VGS = − 4 V ID = 1.8 A, VGS = 0 (Note 2) ns nC V Note 2: Pulse test 1 2007-11-01

ブランド

TOSHIBA

会社名

株式会社 東芝セミコンダクター&ストレージ社

本社国名

日本

事業概要

半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI

供給状況

 
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