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74V1G66STR
74V1G66 Single bilateral switch Features ■ High speed: tPD = 0.3 ns (typ.) at VCC = 5 V tPD = 0.4 ns (typ.) at VCC = 3.3 V ■ Low power dissipation: ICC = 1 μA (max.) at TA = 25 °C ■ Low "ON" resistance: RON = 6.5 Ω (typ.) at VCC = 5 V II/O = 1 mA RON = 8.5 Ω (typ.) at VCC = 3.3 V II/O = 1 mA ■ Sine wave distortion: 0.04% at VCC = 3.3 V f = 1 kHz ■ Wide operating range: VCC (opr) = 2 V to 5.5 V ■ Improved latch-up immunity SOT23-5L SOT323-5L Description The 74V1G66 is an advanced high-speed CMOS single bilateral switch fabricated in silicon gate C2MOS technology. It achieves high speed propagation delay and very low ON resistances while maintaining true CMOS low power consumption. This bilateral switch handles rail to rail analog and digital signals that may vary across the full power supply range (from GND to VCC). The 74V1G66 is available in the commercial and extended temperature range in SOT23-5L and SOT323-5L packages. All inputs and outputs are equipped with protection circuits against static discharge, giving them ESD immunity and transient excess voltage. The C input is provided to control the switch and it is compatible with standard CMOS outputs. The switch is ON (port I/O is connected to port O/I) when the C input is held high and OFF (high impedance state exists between the two ports) when C is held low. It can be used in many applications as battery powered systems or test equipments. Table 1. Device summary Order code Package Packaging 74V1G66STR SOT23-5L Tape and reel 74V1G66CTR SOT323-5L Tape and reel October 2008 Rev 8 1/15 www.st.com 15
STM
STMicroelectronics NV
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