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LN1251CAL-TR
This product complies with the RoHS Directive (EU 2002/95/EC). Light Emitting Diodes LN1251CALTR Hight Bright Surface Mounting Chip LED J Type Absolute Maximum Ratings Ta = 25°C Parameter Lighting Color Symbol Rating PD 45 mW Forward current IF 15 mA Pulse forward current * IFP 60 mA Reverse voltage VR 3 V Operating ambient temperature Topr Storage temperature Tstg Red Unit d pla inc Pl ea ne lud se pla m d m es vis ne ain ain foll htt it d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d du Relative luminous intensity (%) ty n.p bo p type ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at ion / . M Di ain sc te on na tin nc ue e/ d Power dissipation –25 to +80 °C –30 to +85 °C Note) *: The condition of IFP is duty 10%, Pulse width 1 msec. Electro-Optical Characteristics Ta = 25°C Parameter Symbol Luminous intensity IO Reverse current IR Forward voltage VF Peak emission wavelength λP Spectral half band width Δλ IO IF Min 3.3 9.0 nm IF = 15 mA 20 nm IF VF 1 000 ue 5 10 30 50 V 660 on tin 3 2.6 IF = 15 mA 10 5 50 3 Relative luminous intensity Ta 100 30 Forward current IF (mA) int 1 µA 300 en 3 100 500 an 5 mcd 1.75 30 ce /D 10 Unit IF = 15 mA isc 30 Max VR = 3 V 50 50 1 1 100 Forward current IF (mA) 1.6 1.8 2.0 10 −20 2.2 Forward voltage VF (V) 0 20 40 60 80 100 Ambient temperature Ta (°C) Relative luminous intensity λP IF Ta 25 100 Directive characteristics 80 30° 60 20° 10° 40° 700 90° 800 100 Peak emission wavelength λP (nm) Publication date: January 2009 50° 60° 70° 20° 80° 600 40° 40° 70° 0 500 30° 60° 60° 20 10° 20° 80° 50° 40 0° 80 60 40 20 0 Forward current FIF (mA) 順方向電流 I (mA) Relative luminous intensity (%) Typ IF = 10 mA 100 Ma Luminous intensity IO (mcd) 100 Conditions 20 15 10 5 80° 20 40 60 Relative luminous intensity (%) SHD00624BEK 80 90° 100 0 0 20 40 60 80 100 Ambient temperature Ta (°C) 1
PANASONIC
パナソニック株式会社
日本
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