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B7B-EHLFSN
2SK2845 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSIII) 2SK2845 Unit: mm Chopper Regulator, DC/DC Converter and Motor Drive Applications 1.7 ± 0.2 : RDS (ON) = 8.0 Ω (typ.) High forward transfer admittance : |Yfs| = 0.9 S (typ.) 0.6 MAX. 5.5 ± 0.2 Low drain-source ON-resistance 6.8 MAX. 5.2 ± 0.2 : IDSS = 100 μA (max) (VDS = 720 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 0.95 MAX. 120 MIN. Low leakage current 0.6 ± 0.15 Absolute Maximum Ratings (Ta = 25°C) Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 kΩ) VDGR 900 V Gate-source voltage VGSS ±30 V 0.6 MAX. 1 2 3 2 1. 2. GATE DRAIN （HEAT SINK） 3. SOURSE 1 (Note 1) ID 1 Pulse (Note 1) IDP 3 Drain power dissipation (Tc = 25°C) PD 40 W JEDEC Single-pulse avalanche energy (Note 2) EAS 324 mJ JEITA SC-64 Avalanche current IAR 1 A TOSHIBA 2-7B5B Repetitive avalanche energy (Note 3) EAR 4.0 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C ― Weight: 0.36 g (typ.) 1.7 ± 0.2 6.8 MAX. 0.6 ± 0.15 0.95 MAX. 0.6 ± 0.15 0.6 MAX. 2.3 2.3 1 2 2.3 3 2.3 Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 3.125 Rth (ch−a) 125 °C / W 1. 2. GATE DRAIN （HEAT SINK） 3. SOURSE 2 1 °C / W Thermal resistance, channel to ambient 0.6 MAX. 1.5 ± 0.2 5.5 ± 0.2 5.2 ± 0.2 9.6 ± 0.3 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 3 2.5 MAX. A 1.1 ± 0.2 Drain current 0.1 ± 0.1 DC 2.3 2.3 2.5 MAX. Symbol 1.1 ± 0.2 Characteristic 3 JEDEC ― Note 1: Ensure that the channel temperature does not exceed 150°C. JEITA ― Note 2: VDD = 90 V, Tch = 25°C (initial), L = 594 mH, RG = 25 Ω, IAR = 1 A TOSHIBA Note 3: Repetitive rating: pulse width limited by maximum channel temperature 2-7B7B Weight: 0.36 g (typ.) This transistor is an electrostatic-sensitive device. Handle with care. 1 2009-07-13
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