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E2G1052-17-X1
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4-Bank ¥ 1,048,576-Word ¥ 16-Bit SYNCHRONOUS DYNAMIC RAM
DESCRIPTION
The MD56V62160/H is a 4-bank ¥ 1,048,576-word ¥ 16-bit synchronous dynamic RAM,
fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs
and outputs are LVTTL compatible.
FEATURES
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•
•
•
•
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Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell
4-bank ¥ 1,048,576-word ¥ 16-bit configuration
3.3 V power supply, ±0.3 V tolerance
Input
: LVTTL compatible
Output : LVTTL compatible
Refresh : 4096 cycles/64 ms
Programmable data transfer mode
– CAS latency (2, 3)
– Burst length (2, 4, 8)
– Data scramble (sequential, interleave)
• CBR auto-refresh, Self-refresh capability
• Package:
54-pin 400 mil plastic TSOP (Type II) (TSOPII54-P-400-0.80-K) (Product : MD56V62160/H-xxTA)
xx indicates speed rank.
PRODUCT FAMILY
Family
Max.
Frequency
Access Time (Max.)
tAC2
tAC3
100 MHz
9 ns
9 ns
MD56V62160-12
83 MHz
14 ns
10 ns
MD56V62160H-15
66 MHz
9 ns
9 ns
MD56V62160-10
ar
This version: Mar. 1998
MD56V62160/H
in
¡ Semiconductor
MD56V62160/H
¡ Semiconductor
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