Preliminary Technical Information
IXYT80N90C3
IXYH80N90C3
XPTTM 900V IGBTs
GenX3TM
VCES
IC110
VCE(sat)
tfi(typ)
High-Speed IGBT
for 20-50 kHz Switching
=
=
≤
=
900V
80A
2.7V
86ns
TO-268 (IXYT)
G
E
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1MΩ
900
900
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
IC25
ILRMS
IC110
ICM
TC = 25°C (Chip Capability)
Terminal Current Limit
TC = 110°C
TC = 25°C, 1ms
165
160
80
360
A
A
A
A
SSOA
(RBSOA)
VGE = 15V, TVJ = 150°C, RG = 2Ω
Clamped Inductive Load
ICM = 160
@VCE ≤ VCES
A
PC
TC = 25°C
830
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
°C
°C
1.13/10
Nm/lb.in.
4
6
g
g
TJ
TJM
Tstg
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Md
Mounting Torque (TO-247)
Weight
TO-268
TO-247
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IC
= 250μA, VGE = 0V
950
VGE(th)
IC
= 250μA, VCE = VGE
3.5
ICES
VCE = VCES, VGE = 0V
V
5.5
IGES
VCE(sat)
IC
= 80A, VGE = 15V, Note 1
TJ = 150°C
© 2013 IXYS CORPORATION, All Rights Reserved
2.3
2.9
μA
μA
±100
VCE = 0V, VGE = ±20V
G
C
E
G = Gate
E = Emiiter
C (Tab)
C
= Collector
Tab = Collector
Features
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
International Standard Packages
nA
2.7
V
V
High Power Density
Low Gate Drive Requirement
V
25
750
TJ = 150°C
TO-247 (IXYH)
Advantages
Characteristic Values
Min.
Typ.
Max.
BVCES
C (Tab)
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
DS100446A(02/13)
