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部品型式

IDT71T75602S133PFGPFGI

製品説明
仕様・特性

512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features x x x x x x x x x x x x x Advance Information IDT71T75602 IDT71T75802 Description 512K x 36, 1M x 18 memory configurations Supports high performance system speed - 166 MHz (3.5 ns Clock-to-Data Access) ZBTTM Feature - No dead cycles between write and read cycles Internally synchronized output buffer enable eliminates the need to control OE Single R/W (READ/WRITE) control pin Positive clock-edge triggered address, data, and control signal registers for fully pipelined applications 4-word burst capability (interleaved or linear) Individual byte write (BW1 - BW4) control (May tie active) Three chip enables for simple depth expansion 2.5V power supply (±5%) 2.5V I/O Supply (VDDQ) Power down controlled by ZZ input Packaged in a JEDEC standard 100-pin plastic thin quad flatpack (TQFP), 119 ball grid array (BGA) and a 165 fine pitch ball grid array (fBGA). The IDT71T75602/802 are 2.5V high-speed 18,874,368-bit (18 Megabit) synchronous SRAMs. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, they have been given the name ZBTTM, or Zero Bus Turnaround. Address and control signals are applied to the SRAM during one clock cycle, and two cycles later the associated data cycle occurs, be it read or write. The IDT71T75602/802 contain data I/O, address and control signal registers. Output enable is the only asynchronous signal and can be used to disable the outputs at any given time. A Clock Enable CEN pin allows operation of the IDT71T75602/802 to be suspended as long as necessary. All synchronous inputs are ignored when (CEN) is high and the internal device registers will hold their previous values. There are three chip enable pins (CE1, CE2, CE2) that allow the user to deselect the device when desired. If any one of these three is not asserted when ADV/LD is low, no new memory operation can be initiated. Pin Description Summary A0-A19 Address Inputs Input Synchronous CE1, CE2, CE2 Chip Enables Input Synchronous OE Output Enable Input Asynchronous R/W Read/Write Signal Input Synchronous CEN Clock Enable Input Synchronous BW1, BW2, BW3, BW4 Individual Byte Write Selects Input Synchronous CLK Clock Input N/A ADV/LD Advance burst address / Load new address Input Synchronous LBO Linear / Interleaved Burst Order Input Static TMS Test Mode Select Input N/A TDI Test Data Input Input N/A TCK Test Clock Input N/A TDO Test Data Input Output N/A ZZ Sleep Mode Input Synchronous I/O0-I/O31, I/OP1-I/OP4 Data Input / Output I/O Synchronous VDD, VDDQ Core Power, I/O Power Supply Static VSS Ground Supply Static 5313 tbl 01 ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc. and the architecture is supported by Micron Technology and Motorola, Inc. MAY 2000 1 ©2000 Integrated Device Technology, Inc. DSC-5313/00

ブランド

IDT

会社名

Integrated Device Technology, Inc.

本社国名

U.S.A

事業概要

通信・コンピュータ・一般向け機器などで使用する低消費電力で高性能なアナログ-デジタル混在半導体部品の設計と製造を行っている。主にOEM製品を扱っている。 RF(無線)、高性能タイミング、メモリーインタフェース、リアルタイムインターコネクト、オプティカルインターコネクト、ワイヤレス給電、スマートセンサーを製造するメーカー

供給状況

 
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