1SS133
Diodes
Switching diode
1SS133
Applications
High speed switching
External dimensions (Unit : mm)
CATHODE BAND (YELLOW)
φ0.40.1
Features
1) Glass sealed envelope. (MSD)
2) High reliability.
291
2.70.3
291
φ1.80.2
ROHM : MSD
JEDEC : DO-34
Construction
Silicon epitaxial planar
Taping specifications (Unit : mm)
Symbol
BROWN
A
H2
BLUE
T-72
Ａ
E
Standard dimension
value(mm)
T-77
52.4±1.5
+0.4
0
26.0
T-72
5.0±0.5
T-77
5.0±0.3
T-72
C
1.0 max.
T-77
T-72
D
0
T-77
T-72
1/2A±1.2
E
T-77
1/2A±0.4
T-72
0.7 max.
Ｆ
T-77
0.2 max.
T-72
H1
6.0±0.5
T-77
T-72
H2
5.0±0.5
T-77
T-72
1.5 max.
|L1-L2|
T-77
0.4 max.
＊H1(6mm)：BROWN
B
B
C
L1
L2
F
D
H1
Absolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Forward voltage (repetitive peak)
Average rectified forward current
Surge current (1s)
Power dissipation
Junction temperature
Storage temperature
Limits
90
80
400
130
600
300
175
-65 to 175
Symbol
VRM
VR
IFM
Io
Isurge
P
Tj
Tstg
Unit
V
V
mA
mA
mA
mW
℃
℃
Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminal
Reverse recovery time
Symbol
VF
IR
Ct
Min.
-
Typ.
-
Max.
1.2
0.5
2
Unit
V
µA
pF
Trr
-
-
4.0
ns
Conditions
IF=100mA
VR=80V
VR=0.5V , f=1MHz
VR=6V,IF=10mA,RL=50Ω,Irr=1/10 IR
Rev.C
1/3
