MX29LV040
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE
3V ONLY EQUAL SECTOR FLASH MEMORY
FEATURES
• Extended single - supply voltage range 2.7V to 3.6V
• 524,288 x 8 only
• Single power supply operation
- 3.0V only operation for read, erase and program
operation
• Fast access time: 55R/70/90/120ns
• Low power consumption
- 20mA maximum active current
- 0.2uA typical standby current
• Command register architecture
- 8 equal sector of 64K-Byte each
- Byte Programming (9us typical)
- Sector Erase (Sector structure 64K-Byte x8)
• Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability.
- Automatically program and verify data at specified
address
• Erase suspend/Erase Resume
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- Suspends sector erase operation to read data from,
or program data to, any sector that is not being erased,
then resumes the erase.
Status Reply
- Data# Polling & Toggle bit for detection of program
and erase operation completion.
Sector protection
- Hardware method to disable any combination of
sectors from program or erase operations
- Any combination of sectors can be erased with erase
suspend/resume function.
100,000 minimum erase/program cycles
Latch-up protected to 100mA from -1V to VCC+1V
Package type:
- 32-pin PLCC
- 32-pin TSOP
Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
20 years data retention
GENERAL DESCRIPTION
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maximum EPROM compatibility.
The MX29LV040 is a 4-mega bit Flash memory organized as 512K bytes of 8 bits. MXIC's Flash memories
offer the most cost-effective and reliable read/write nonvolatile random access memory. The MX29LV040 is
packaged in 32-pin PLCC and TSOP. It is designed to
be reprogrammed and erased in system or in standard
EPROM programmers.
The standard MX29LV040 offers access time as fast as
55ns, allowing operation of high-speed microprocessors
without wait states. To eliminate bus contention, the
MX29LV040 has separate chip enable (CE#) and output
enable (OE#) controls.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cycling. The MX29LV040 uses a 2.7V~3.6V VCC supply
to perform the High Reliability Erase and auto Program/
Erase algorithms.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV040 uses a command register to manage this
functionality. The command register allows for 100%
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamperes on
address and data pin from -1V to VCC + 1V.
P/N:PM0722
REV. 1.3, DEC. 20, 2004
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