SiS902DN
Vishay Siliconix
Dual N-Channel 75-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.186 at VGS = 10 V
4e
0.228 at VGS = 4.5 V
75
ID (A)
4e
Qg (Typ.)
2.1 nC
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Low Thermal Resistance PowerPAK®
Package with Small Size and Low 1.07 mm
Profile
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
PowerPAK 1212-8
• POL
D1
S1
3.30 mm
3.30 mm
1
G1
2
S2
3
G2
4
G1
D1
8
D2
G2
D1
7
D2
6
Bottom View
D2
S1
S2
N-Channel MOSFET
N-Channel MOSFET
5
Ordering Information: SiS902DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
75
Gate-Source Voltage
VGS
± 20
TC = 70 °C
TA = 25 °C
ID
IDM
Avalanche Current
L = 0.1 mH
Single-Pulse Avalanche Energy
TC = 70 °C
TA = 25 °C
Soldering Recommendations (Peak
Temperature)c, d
A
8
IAS
2
0.2
mJ
15.4
PD
9.9
3.1a, b
W
2a, b
TA = 70 °C
Operating Junction and Storage Temperature Range
3a, b
EAS
TC = 25 °C
Maximum Power Dissipation
4e
2.4a, b
TA = 70 °C
Pulsed Drain Current
V
4e
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
Unit
TJ, Tstg
- 55 to 150
260
°C
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 64804
S09-0661-Rev. A, 20-Apr-09
www.vishay.com
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