TK7S10N1Z
MOSFETs
Silicon N-channel MOS (U-MOS-H)
TK7S10N1Z
1. Applications
•
Automotive
•
Switching Voltage Regulators
•
Motor Drivers
2. Features
(1)
AEC-Q101 qualified
(2)
Low drain-source on-resistance: RDS(ON) = 40 mΩ (typ.) (VGS = 10 V)
(3)
Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)
(4)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.1 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain (heatsink)
3: Source
DPAK+
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
25
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
100
V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
7
Drain current (pulsed)
(Note 1)
IDP
21
Power dissipation
(Tc = 25)
A
(Note 2)
PD
50
W
(Note 3)
Single-pulse avalanche energy
EAS
19.6
mJ
Single-pulse avalanche current
IAS
7
A
dVDS/dt
Turn-off dVDS/dt ruggedness
8.4
V/ns
Channel temperature
(Note 4)
Tch
175
Storage temperature
(Note 4)
Tstg
-55 to 175
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
1
2014-01
2015-06-19
Rev.4.0