EN25Q80B
EN25Q80B
8 Megabit Serial Flash Memory with 4Kbyte Uniform Sector
FEATURES
• Single power supply operation
- Full voltage range: 2.7-3.6 volt
• Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3
• 8 M-bit Serial Flash
- 8 M-bit/1024 K-byte/4096 pages
- 256 bytes per programmable page
•
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Standard, Dual or Quad SPI
Standard SPI: CLK, CS#, DI, DO, WP#
Dual SPI: CLK, CS#, DQ0, DQ1, WP#
Quad SPI: CLK, CS#, DQ0, DQ1, DQ2, DQ3
•
-
High performance
104MHz clock rate for one data bit
104MHz clock rate for two data bits
104MHz clock rate for four data bits
• Low power consumption
- 10 mA typical active current
- 1 μA typical power down current
•
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Uniform Sector Architecture:
256 sectors of 4-Kbyte
32 blocks of 32-Kbyte
16 blocks of 64-Kbyte
Any sector or block can be erased individually
• Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
•
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High performance program/erase speed
Page program time: 0.6ms typical
Sector erase time: 30ms typical
32KB Block erase time 100ms typical
64KB Block erase time 200ms typical
Chip erase time: 3 seconds typical
• Lockable 512 byte OTP security sector
• Support Serial Flash Discoverable
Parameters (SFDP) signature
• Read Unique ID Number
• Minimum 100K endurance cycle
•
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Package Options
8 pins SOP 150mil body width
8 pins VSOP 150mil body width
8 pins SOP 200mil body width
- 8 contact USON 2x3 mm
8 contact VDFN (5x6mm)
-
8 pins PDIP
24 balls TFBGA (6x8mm)
All Pb-free packages are compliant RoHS,
Halogen-Free and REACH.
• Industrial temperature Range
GENERAL DESCRIPTION
The EN25Q80B is an 8 Megabit (1024K-byte) Serial Flash memory, with advanced write protection
mechanisms. The EN25Q80B supports the standard Serial Peripheral Interface (SPI), and a high
performance Dual output as well as Quad I/O using SPI pins: Serial Clock, Chip Select, Serial DQ0(DI),
DQ1(DO), DQ2(WP#) and DQ3(NC). SPI clock frequencies of up to 104MHz are supported allowing
equivalent clock rates of 208MHz (104MHz x 2) for Dual Output and 416MHz (104MHz x 4) for Quad
Output when using the Dual/Quad Output Fast Read instructions. The memory can be programmed 1
to 256 bytes at a time, using the Page Program instruction.
The EN25Q80B is designed to allow either single Sector/Block at a time or full chip erase operation. The
EN25Q80B can be configured to protect part of the memory as the software protected mode. The
device can sustain a minimum of 100K program/erase cycles on each sector or block.
This Data Sheet may be revised by subsequent versions
©2013 Eon Silicon Solution, Inc.,
1
or modifications due to changes in technical specifications.
Rev. B, Issue Date: 2013/10/16
www.eonssi.com
