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部品型式

2SJ103GR

製品説明
仕様・特性

2SJ103 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ103 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • High breakdown voltage: VGDS = 50 V • High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) • Low RDS (ON): RDS (ON) = 270 Ω (typ.) (IDSS = −5 mA) • Unit: mm Complimentary to 2SK246 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VGDS 50 V Gate current IG −10 mA Drain power dissipation PD 300 mW Junction temperature Tj 125 °C Tstg −55~125 °C Gate-drain voltage Storage temperature range Note: Using continuously under heavy loads (e.g. the application of JEDEC TO-92 high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA SC-43 reliability significantly even if the operating conditions (i.e. TOSHIBA 2-5F1C operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 0.21 g (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Gate cut-off current Gate-drain breakdown voltage Drain current Symbol Test Condition Min Typ. Max Unit IGSS VGS = 30 V, VDS = 0 ⎯ ⎯ 1.0 nA V (BR) GDS VDS = 0, IG = 100 μA 50 ⎯ ⎯ V VDS = −10 V, VGS = 0 −1.2 ⎯ −14 mA VDS = −10 V, ID = −0.1 μA 0.3 ⎯ 6.0 V VDS = −10 V, VGS = 0, f = 1 kHz 1.0 4.0 ⎯ mS VDS = −10 mV, VGS = 0, IDSS = −5 mA ⎯ 270 ⎯ Ω IDSS (Note) Gate-source cut-off voltage VGS (OFF) Forward transfer admittance ⎪Yfs⎪ Drain-source ON resistance RDS (ON) Input capacitance Ciss VDS = −10 V, VGS = 0, f = 1 MHz ⎯ 18 ⎯ pF Reverse transfer capacitance Crss VDG = −10 V, ID = 0, f = 1 MHz ⎯ 3.6 ⎯ pF Note: IDSS classification Y: −1.2~−3.0 mA, GR: −2.6~−6.5 mA, BL: −6~−14 mA 1 2007-11-01

ブランド

TOSHIBA

会社名

株式会社 東芝セミコンダクター&ストレージ社

本社国名

日本

事業概要

半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI

供給状況

 
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