TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
2SA940
Silicon PNP Power Transistor
DESCRIPTION
• Collector-Emitter Breakdown Voltage
:V(BR)CEo=-150V(Min)
• DC Current Gain
: h FE =40-140@l c =-0.5A
• Complement to Type 2SC2073
/"*'!•,
ft
PIN 1.BASE
2.COLLECTOR
3. EMITTER
TO-220C package
APPLICATIONS
• Designed for use in general purpose power amplifier,
vertical output applications.
.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
-
B M
•* V H lx~
U k
UNIT
»
!
A
,'
..
VCBO
Collector-Base Voltage
-150
V
T
JL
'^TT^^
iT-H.
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
PC
Total Power Dissipation
@ TC=25'C
Tstg
V
K
Ic
Tj
-150
-5
-1.5
V
"
-t
rir»
*r* j
-~» R(*
A
c
Junction Temperature
Storage Temperature Range
25
W
150
°c
-55~150
r
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
5.0
•c/w
4
mm
DIN
A
B
C
D
F
G
H
J
K
L
a
R
s
U
V
MAX
MIN
15.50 15.90
9.90 10.20
4.20
4.50
0.90
0.70
3.40
3.70
5.18
4.98
2.90
2.68
0.44
0.60
13.00 13.40
1.20
1.45
2.90
2.70
2.30
2.70
1.29
1.35
6.65
6.45
8.66
8.86
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors