NTD78N03
Power MOSFET
25 V, 78 A, Single N−Channel, DPAK
Features
• Low RDS(on)
• Optimized Gate Charge
• Pb−Free Packages are Available
http://onsemi.com
V(BR)DSS
Applications
• Desktop VCORE
• DC−DC Converters
• Low Side Switch
RDS(on) TYP
ID MAX
4.6 @ 10 V
25 V
78 A
6.5 @ 4.5 V
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Continuous Drain
Current (Note 1)
TC = 25°C
Power Dissipation
(Note 1)
TC = 25°C
Power Dissipation
(Note 2)
V
"20
V
ID
14.8
A
TC = 85°C
N−Channel
G
S
11.5
PD
2.3
4
W
4
4
TC = 25°C
Steady
State
ID
TC = 85°C
A
11.4
1 2
8.8
TC = 25°C
PD
1.4
W
Continuous Drain
Current (RqJC)
TC = 25°C
ID
78
A
Power Dissipation
(RqJC)
TC = 25°C
Pulsed Drain Current
Current Limited by Package
TC = 85°C
tp = 10 ms
TA = 25°C
Drain to Source dV/dt
Operating Junction and Storage Temperature
64
W
IDM
210
A
IDmaxPkg
45
A
dV/dt
8.0
V/ns
TJ, Tstg
−55 to 175
°C
1
2
3
CASE 369AA
CASE 369D
DPAK
DPAK
(Bend Lead) (Straight Lead)
STYLE 2
STYLE 2
78
722.5
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 seconds)
TL
260
°C
Junction−to−Case (Drain)
RqJC
1.95
RqJA
65
Junction−to−Ambient − Steady State (Note 2)
RqJA
110
CASE 369AD
IPAK
(Straight Lead)
4
Drain
°C/W
Junction−to−Ambient − Steady State (Note 1)
4
Drain
A
EAS
4
Drain
THERMAL RESISTANCE
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2006
September, 2006 − Rev. 6
1
YWW
78
N03G
IS
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 24 V, VGS = 10 V,
L = 5.0 mH, IL(pk) = 17 A, RG = 25 W)
2 3
MARKING DIAGRAMS
& PIN ASSIGNMENTS
YWW
78
N03G
Source Current (Body Diode)
56
PD
1
3
YWW
78
N03G
Continuous Drain
Current (Note 2)
Unit
25
VGS
Gate−to−Source Voltage
Value
VDSS
Drain−to−Source Voltage
2
1 2 3
1 Drain 3
Gate Source Gate Drain Source 1 2 3
Gate Drain Source
Y
WW
78N03
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NTD78N03/D
