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MA2B064
Trigger Devices MA2B064 (MA64) Silicon planar type trigger device Unit: mm Thyristor element • Satisfactory symmetry of VBO • Large VO and small IBO 24 min. Symbol Average total power dissipation P(AV) Peak current*1 Rating Operating ambient temperature*2 Storage temperature 100 Tstg A °C −55 to +125 Topr Anode mW 2.0 Cathode Unit 150 IPM φ 1.78±0.15 d pla inc Pl ea ne lud se pla m d m es vis ne ain ain foll htt it d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at ion / . I Absolute Maximum Ratings Ta = 25°C Parameter 24 min. 4.0±0.5 φ 0.50±0.05 M Di ain sc te on na tin nc ue e/ d I Features °C Note) *1 : Ta < 50°C, t = 10 µs, repetitive frequency 60 Hz *2 : Maximum ambient temperature during operation DO-35-A2 Marking Symbol: MA2B064 I Electrical Characteristics Ta = 25°C IBO ce /D isc on tin Breakover current Breakover voltage*1 Output Symbol ue Parameter VBO voltage*1 VO an Temperature coefficient of breakover voltage en Breakover voltage deviation*2 Conditions I = IBO 4 int Ma VBO Max Unit 50 µA 36 28 ∆VBO 70 kΩ Typ V = VBO V 7 V 0.1 %/°C 3.5 Note) 1. Rated input/output frequency: 100 MHz 2. *1 : Measurement of VBO and VO 30 kΩ Min V *2 : Symmetry of VBO VO VBO' Amp. VBO 100 V[rms] 0.068 µF 20 Ω Note) The part number in the parenthesis shows conventional part number. Publication date: August 2001 SKM00002AED 1
PANASONIC
パナソニック株式会社
日本
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