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CNA1303K

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This product complies with the RoHS Directive (EU 2002/95/EC). Transmissive Photosensors (Photo lnterrupters) CNA1303K (ON1003) Photo lnterrupter For contactless SW and object detection  Overview M Di ain sc te on na tin nc ue e/ d CNA1302K is an ultraminiature, highly reliable transmissive photosensor in which a high efficiency GaAs infrared light emitting diode chip and a high sensitivity Si phototransistor chip are integrated in a double molded resin package.  Ultraminiature: 4.2 mm × 4.2 mm (height: 5.2 mm)  Fast response: tr , tf = 35 μs (typ.)  Highly precise position detection: 0.15 mm  Gap width: 1.2 mm  Absolute Maximum Ratings Ta = 25°C Parameter Input (Light emitting diode) Symbol 50 mA 6 V VCEO 35 V 6 V IC 20 mA PC 75 mW Topr Collector current mW VECO Emitter-collector voltage (Base open) 75 VR Reverse voltage Unit IF Forward current Rating PD Power dissipation *1 Collector-emitter voltage (Base open) Output (Photo transistor) d pla inc Pl ea ne lud se pla m d m es vis ne ain ain foll htt it d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at ion / .  Features –25 to +85 °C Tstg –40 to +100 °C Collector power dissipation *2 ue Operating ambient temperature on tin Storage temperature ce /D isc Note) *1: Input power derating ratio is 1.0 mW/°C at Ta ≥ 25°C *2: Output power derating ratio is 1.0 mW/°C at Ta ≥ 25°C an  Electrical-Optical Characteristics Ta = 25°C±3°C Symbol en Parameter IR Ma Output Collector-emitter cutoff current characteristics (Base open) Typ Collector current IC Collector-emitter saturation voltage Transfer characteristics Rise time * VCE(sat) IF = 10 mA, IC = 40 µA tr VCC = 5 V, IC = 0.1 mA, RL = 1 000 W Fall time * tf 1.4 V nA 1 300 100 µA µA 0.4 VCE = 5 V, IF = 5 mA Unit 100 VCE = 20 V 1.2 Max 10 IF = 20 mA ICEO Min VR = 3 V VF int Reverse current Input characteristics Forward voltage Conditions V 35 µs 35 µs Note) 1. Input and output are practiced by electricity. 2. This device is designed by disregarding radiation. 3. *: Switching time measurement circuit Sig. in 50 Ω VCC RL (Input pulse) Sig. out 90% 10% (Output pulse) tr tr : Rise time tf : Fall time tf Note) The part number in the parenthesis shows conventional part number. Publication date: October 2008 SHG00023CED 1

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