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部品型式

2SD1213R

製品説明
仕様・特性

Ordering number:ENN1022A PNP/NPN Epitaxial Planar Silicon Transistors 2SB904/2SD1213 30V/12A High-Speed Switching Applications Applications Package Dimensions · Large current switching of relay drivers, high-speed inverters, converters. unit:mm 2022A [2SB904/2SD1213] Features 15.6 14.0 3.2 3.5 4.8 2.0 1.3 1.2 15.0 20.0 2.6 · Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. · Large current capacity. 1.6 20.0 2.0 0.6 1.0 2 3 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB 1.4 1 0.6 ( ) : 2SB904 5.45 5.45 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO Collector Current Collector Current (Pulse) V (–)6 V (–)20 A ICP Emitter-to-Base Voltage V (–)30 VEBO IC Collector-to-Emitter Voltage (–)60 (–)30 A 2.5 W 60 150 W ˚C –55 to +150 ˚C Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(–)40V, IE=0 (–)0.1 mA Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 (–)0.1 mA hFE1 VCE=(–)2V, VCE=(–)2V, DC Current Gain hFE2 Collector-to-Emitter Saturation Voltage VCE(sat) IC=(–)1A IC=(–)10A 70* 280* 30 IC=(–)8A, IB=(–)0.4A * : The 2SB904/2SD1213 are classified as follows according to hFE at 1A. (–0.25) (–0.5) V 0.2 0.4 V Continued on next page. Rank Q R S hFE 70 to 140 100 to 200 140 to 280 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1503TN (KT)/92098HA (KT)/4067KI/D152KI, TS No.1022–1/4

ブランド

SANYO

会社名

三洋電機株式会社

本社国名

日本

事業概要

パナソニックグループの日本の電機メーカー。化製品、半導体等の製造・販売・保守・サービス等。

供給状況

 
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2SD1259 2SD1259-Q 2SD125AHB 2SD12600PL2SD1260-PDSTX 2SD12600PL2SD1260-PDSTXPBF
2SD1260A 2SD1261 2SD1262AQ 2SD1263 2SD1263A
2SD1263AP0LB 2SD1263A-PLB 2SD1263APQLB 2SD1263A-QLB 2SD1264
2SD1264A 2SD1264A-P 2SD1264A-PLB 2SD1264A-PPANATO- 2SD1264Q
2SD1265 2SD1266 2SD1266A 2SD1266AD1266A 2SD1266A-O
2SD1266AP 2SD1266A-PCAPSULATED 2SD1266-A-PLB 2SD1266AQ 2SD1266A-QCAPSULATED
2SD1266-AQ-LB 2SD1266-P 2SD1266-PBACAPSULATED 2SD1266PBD 2SD1266PBDTO-220
2SD1266PLB 2SD1266PLBTO-220 2SD1266-PLS 2SD1266PTO-220PANA 2SD1266PVB
2SD1266PVBTO-220 2SD1266-Q 2SD1266Q-M 2SD1266QTO-220PAN 2SD1267A-P
2SD1267B 2SD1267BR 2SD1267P 2SD1267-PCAPSULATED 2SD1267-QCAPSULATED
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2SD1271A-QPANA6D 2SD1272 2SD1273 2SD1273A 2SD1273AF
2SD1273A-PLB 2SD1273F 2SD1273-O 2SD1273-OMAT 2SD1273-P
2SD1273-P00PANA 2SD1273-PLB 2SD1273PREFORMED 2SD1273PTO-220MAT 2SD1273Q
2SD1273Q100V3A40W 2SD1273Q100V3A40WPANAT 2SD1273QP 2SD1274 2SD1275
2SD1275AP 2SD1275-P 2SD1275-Q 2SD1275-QLS 2SD1276
2SD1276A-D 2SD1276A-P 2SD1276A-PLB 2SD1276A-PPANA98+ 2SD1276A-Q
2SD1276-P 2SD1276PAN 2SD1276-PLB 2SD1276-PPANA 2SD1277
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